CMT2301 p-c hannel e nhancement m ode m osfet 2005/0 1 /05 champio n micro e lect roni c co rpo r ation page 1 general description features t he cmt 2301 is the p-c h a n nel log i c e nha nceme n t mode po w e r fie l d eff e ct transistors are pro duce d using hig h cell density , dmos trench technology . t h is high dens it y process is especi a ll y tail o r ed to minimiz e on-state resistance. t hese device s are partic u l a rl y suite d fo r lo w vo ltage appl icati on suc h as ce llu lar p hon e a nd n o te book c o mput er po w e r m a n age ment an d oth e r batter y po w e r ed circu i ts, and lo w in-l ine p o w e r loss are n eed ed in a ve r y small outl i n e surface mount package. applications pow e r management in notebook portable equipment battery pow e red sy stem dc/dc converter load sw itch dsc lcd display inverter -20v/-2.3a ,r ds (on) = 130 m ? @vgs= - 4.5v -20v/-1.9a ,r ds (on) = 190 m ? @vgs= - 2.5v super high density cell design for extremely low r ds (on) exceptional on-resistance and maximum dc current capability sot - 23-3 package design pin configuration symbol sot - 23-3 top view 1 3 2 gate dr ai n sourc e d s g p-channel mosf et ordering information part nu mb er packag e cmt 2 3 0 1 m 2 3 3 s o t - 2 3 - 3 cmt 2 3 0 1 g m 2 3 3 * s o t - 2 3 - 3 *note: g : suffix for pb f r ee product
CMT2301 p-c hannel e nhancement m ode m osfet 2005/0 1 /05 champio n micro e lect roni c co rpo r ation page 2 absolute maximum ratings ra t i n g s y m b o l va lue u n i t drain- to- source voltage v ds s - 2 0 v gate-to-source voltage v gss 8 v t a =2 5 - 2 . 5 continuous drain current(t j = 150 ) t a =7 0 i d -1.5 a pulsed drain current i dm - 1 0 a continuous source current(diode conduction) i s - 1 . 6 a t a =2 5 1 . 2 5 pow e r dissipation t a =7 0 p d 0.8 w operating juncti on t e mperature t j 150 storage t e mperature range t st g -55/150 t hermal resistance-junction to ambient r ja 120 /w electrical characteristics unless otherw i se specified, t j = 2 5 . CMT2301 c h a r a c t e r i s t i c s y m b o l m i n ty p m a x u n i t s static drain-source breakdow n voltage ( v gs = 0 v, i d = -250 a) v (br)dss - 2 0 v gate threshold voltage ( v ds = v gs , i d = -250 a) v gs (t h ) - 0 . 4 5 - 1 . 5 v gate leakage current ( v ds =0 v, v gs = 8 v) i gs s 100 na zero gate voltage drain current (v ds = -20 v, v gs = 0 v) (v ds = -20 v, v gs = 0 v, t j = 55 ) i dss -1 -10 a on-state drain current ( v ds -5 v, v gs = -4.5v) ( v ds -5 v, v gs = -2.5v) i d( on) -6 -3 a drain-source on-resistance ( v gs = -4.5 v, i d = -2.8a) ( v gs = -2.5 v, i d = -2.0a) r ds( on) 0.105 0.145 0.13 0.19 ? forw ard transconductance (v ds = -5 v, i d = -2.8v) g fs 6 . 5 s diode forw ard voltage (i s =-1.6a,v gs = 0 v ) v sd - 0 . 8 - 1 . 2 v dy namic input capacitance c is s 4 1 5 output capacitance c os s 2 2 3 reverse transfer capacitance (v ds = -6 v, v gs =-0v, f = 1.0 mhz) c rss 8 7 pf t d( on) 1 3 2 5 turn-on ti me t r 3 6 6 0 t d( of f ) 4 2 7 0 turn-off ti me (v dd = -6 v,r l =6 ? i d = -1.0 a,v ge n = -4.5 v, r g = 6 ? ) t f 3 4 6 0 ns total gate charge q g 5 . 8 1 0 gate-source charge q gs 0 . 8 5 gate-drain charge (v ds = -6 v, i d = -2.8 a, v gs =-4.5v) q gd 1 . 7 nc
CMT2301 p-c hannel e nhancement m ode m osfet 2005/0 1 /05 champio n micro e lect roni c co rpo r ation page 3 typical characteristics
CMT2301 p-c hannel e nhancement m ode m osfet 2005/0 1 /05 champio n micro e lect roni c co rpo r ation page 4 typical characteristics
CMT2301 p-c hannel e nhancement m ode m osfet 2005/0 1 /05 champio n micro e lect roni c co rpo r ation page 5 typical characteristics
CMT2301 p-c hannel e nhancement m ode m osfet 2005/0 1 /05 champio n micro e lect roni c co rpo r ation page 6 package dimension sot-23-3 e1 l c1 d e a a2 a1 b b1 c 2 1 e1 e l1 d e e1 e e1 b a2 a 2 1 a1 b1 b c c1 ba s e metal wi th pl ati n g se c t i o n b- b see s e cti on b- b l1 l 12 3
CMT2301 p-c hannel e nhancement m ode m osfet 2005/01/05 champion microelectronic corporation page 7 important notice champion microelectronic corporation (cmc) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its cust omers to obtain the latest version of relevant inform ation to verify, before placing orders, that t he information being relied on is current. a few applications using integrated circuit products may involv e potential risks of death, personal injury, or severe property or environmental damage. cmc integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. us e of cmc products in such applications is understood to be fully at the risk of the cust omer. in order to minimize risks associated with the customer?s applications, th e customer should provide adequate design and operating safeguards. hsinchu headquarter sales & marketing 5f, no. 11, park avenue ii, science-based industrial park, hsinchu city, taiwan 11f, no. 306-3, sec. 1, ta tung road, hsichih, taipei hsien 221, taiwan t e l : +886-3-567 9979 t e l : +886-2-8692 1591 f a x : +886-3-567 9909 f a x : +886-2-8692 1596
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